| PART |
Description |
Maker |
| VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
| MB81117822A-84 MB81117822A-125 |
CMOS 2×1M ×8 Bit
Synchronous Dynamic RAM(CMOS 2×1M ×8 位同步动态RAM)
|
Fujitsu Limited
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
| HM5216808CSERIES 5216808C |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| HM5216808/5216408C HM5216808CTT-80 |
1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
|
Hitachi,Ltd.
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
